• 专利标题:   Semiconductor device for solar cells and light-emitting devices, has charge transportation layer that is doped with conductive material of electrode, which includes chemical vapor deposition grown graphene or carbon nanotubes.
  • 专利号:   WO2021058775-A1, KR2022069082-A, EP4035216-A1, CN114868268-A, US2022359824-A1
  • 发明人:   FERRARI A C, KAKAVELAKIS G, DIMOS K, ORIADA C, OCCHIPINTI L, GEORGE K, CONSTANTINOS D, DACOLM O
  • 专利权人:   CAMBRIDGE ENTERPRISE LTD, CAMBRIDGE ENTERPRISE LTD, CAMBRIDGE ENTERPRISE LTD
  • 国际专利分类:   H01L051/00, H01L051/42, H01L051/50, H01L051/52, H01L051/56, C09D011/52, C23C016/26, H01L031/0224
  • 专利详细信息:   WO2021058775-A1 01 Apr 2021 202130 Pages: 56 English
  • 申请详细信息:   WO2021058775-A1 WOEP076965 25 Sep 2020
  • 优先权号:   GB013835, KR713862, CN80081740

▎ 摘  要

NOVELTY - The semiconductor device comprises a first electrode that includes conductive material. The conductive material is deposited by ink deposition of layered material inks, such as graphene or graphite inks, or the conductive material includes chemical vapor deposition (CVD) grown graphene or carbon nanotubes. A first charge transportation layer is doped with the conductive material of the first electrode. The device further includes an optional first insulation layer, a perovskite active layer, an optional second insulation layer, a second charge transportation layer, and a second electrode. USE - Semiconductor device for solar cells and light-emitting devices. ADVANTAGE - The device provides the conductive material in both the first electrode and as a dopant in the first charge transportation layer to enhance the low initial conductivity of the first charge transportation layer and to form a better network for hole extraction from the perovskite active layer. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method of making a semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of the semiconductor device.