• 专利标题:   Graphene/silicon p-n junctions solar battery for use in solar cell, has n type sheet formed on silicon surface of substrate, and graphene thin film layer and silicon p-n junction formed in schottky junction to form tandem solar cell.
  • 专利号:   CN103137770-A, CN103137770-B
  • 发明人:   TANG Y, MA X, GU W, CHEN J
  • 专利权人:   UNIV SUZHOU SCI TECHNOLOGY
  • 国际专利分类:   H01L031/0224, H01L031/078, H01L031/18
  • 专利详细信息:   CN103137770-A 05 Jun 2013 H01L-031/078 201369 Pages: 11 Chinese
  • 申请详细信息:   CN103137770-A CN10055616 21 Feb 2013
  • 优先权号:   CN10055616

▎ 摘  要

NOVELTY - The battery has an n type sheet formed on a silicon surface of a substrate to obtain a P-type conductive layer towel layer and a n- shaped conductive substrate layer. A silicon p-n junction is formed on a p-type conductive layer by chemical vapor deposition to obtain a graphite film layer with thickness of 10 to 20nm. A graphene thin film layer and the silicon p-n junction are formed in a schottky junction to form a tandem solar cell. USE - Graphene/silicon p-n junctions solar battery for use in a solar cell. ADVANTAGE - The battery is designed such that it improves energy conversion efficiency of the solar cell. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene/silicon p-n junctions solar battery preparing method. DESCRIPTION OF DRAWING(S) - The drawing shows a graphical representation of a graphene/silicon p-n junctions solar battery preparing method.