▎ 摘　　要

NOVELTY - A thin film transistor has a carbon-based layer (3), a system of electrically conductive source electrode (5) and drain electrode (6) in contact with the carbon-based layer, and electrically conductive gate electrode(s) (4) for controlling electric current between the source and drain electrodes. The carbon-based layer is an electrically conducting layer, and has thickness of 1-1000 nm. The carbon-based layer comprises predominantly planar graphene-like structures. USE - Thin film transistor for an LCD and an integrated circuit for providing active drive matrices. ADVANTAGE - The thin film transistor has structural flexibility, and is capable of conducting low-temperature technological processes on large areas and manufactured economically. The carbon-based layer allows parallel orientation of the graphene-like sheets and graphene-like nanoribbons by presetting the direction of the overgrowing process, so that the continuous planar graphene-like sheets and graphene-like nanoribbons are formed during fusion in vacuum, thus causing high mobility of charge carriers and providing high conductivity, and hence allowing formation of large areas of thin and uniform carbon-based layers. The insulating passivation layer is located on the top of transistor, thus protecting the transistor from further processing exposures and from the ambient factors. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following: (1) a carbon-based layer, which comprises planar graphene-like structures (2) a method for producing a carbon-based layer on a substrate, which involves applying a solution of pi -conjugated organic compound of formula (I): CC-Ap-Sm or a combination of organic compounds on a substrate, and drying by forming a solid precursor layer. The carbon-based layer is formed by a level of vacuum, a composition and pressure of ambient gas, and a time dependence of a temperature which are selected so as to ensure a creation of predominantly planar graphene-like structures in the carbon- based layer. The graphene-like structure possesses conductivity and is predominantly continuous within the entire carbon-based layer. The obtained carbon-based layer has a thickness of approximately 1-1000 nm. CC=planar carbon-conjugated core; A=hetero-atomic group; p=0-8; Sm=set of substituents providing a solubility of the organic compound;and m=number of S-type substituents in the set Sm and is 0-8. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a thin film transistor in a top-contact configuration. Substrate (1) Insulator layer (2) Carbon-based layer (3) Electrically conductive gate electrode (4) Electrically conductive source electrode (5) Drain electrode (6)