▎ 摘　　要

NOVELTY - The structure comprises setting a contact piece of characteristic piece on a substrate (10), forming a dielectric layer on the substrate, etching the substrate to form an interconnect channel that exposes the contact feature, forming metal layer on a die-lectric layers and a region other than the contact element, forming graphene conductive structure (15) on the metal layer, filling conductive graphene with at least one graphene layer and electrically connecting with the contact piece, where the graphene layer graphene in a substantially perpendicular to the direction of the substrate. USE - Method for manufacturing a semiconductor structure i.e. back-stage process (BEOL) interconnection structure, of an integrated circuit (IC). ADVANTAGE - The method enables forming the graphene conductive structure on the metal layer, where the conductive graphene is filled in the interconnection channel and electrically connected with the contact piece, and the graphene layer is perpendicular to the direction of the substrate, so that the graphene is formed in the dielectric layer and connected with a metal layer in an effective manner. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of a semiconductor structure. 10Substrate 11Characteristic contact 12Patterned dielectric layer 13Through-hole 14Barrier/liner layer 15Conductive structure