▎ 摘　　要

NOVELTY - The method for preparation of epitaxial silicon carbide-graphene composite film, involves pre-treating substrate in chemical vapor deposition chamber, growing 2-10 microns of silicon carbide epitaxial layer in surface of substrate, heating chemical vapor deposition chamber in protective atmosphere, decomposing and recombining the structure of silicon carbide epitaxial layer of substrate to obtain epitaxial silicon carbide-graphene composite film. USE - Method for preparation of epitaxial silicon carbide-graphene composite film (claimed). ADVANTAGE - The method uses high temperature chemical vapor deposition apparatus instead of expensive single crystal silicon carbide substrate material and ensures continuous growth of epitaxial silicon carbide-graphene composite film. DETAILED DESCRIPTION - Method for preparation of epitaxial silicon carbide-graphene composite film, involves pre-treating substrate in chemical vapor deposition chamber, controlling absolute vacuum of chemical vapor deposition chamber to be greater than 104 MPa, growing 2-10 microns of silicon carbide epitaxial layer in the surface of the substrate at 1500-1600 degrees C, lowering the temperature of chemical vapor deposition chamber to 1000 degrees C, heating the chemical vapor deposition chamber at 1000-1600 degrees C in a protective atmosphere, decomposing and recombining the structure of silicon carbide epitaxial layer of substrate to obtain epitaxial silicon carbide-graphene composite film.