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  • 专利标题:   Preparation of single crystal graphene used for forming graphene thin film, involves annealing copper substrate in non-reducing gas atmosphere and then in reducing gas atmosphere, and depositing graphene on both surfaces of substrate.
  • 专利号:   CN104649259-A, CN104649259-B
  • 发明人:   LIU Z, PENG H, WANG H
  • 专利权人:   UNIV PEKING
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN104649259-A 27 May 2015 C01B-031/04 201565 Pages: 13 Chinese
  • 申请详细信息:   CN104649259-A CN10064067 06 Feb 2015
  • 优先权号:   CN10064067

▎ 摘　　要

NOVELTY - Preparation of single crystal graphene involves annealing copper substrate in non-reducing gas atmosphere, providing resultant product in reactor under reducing gas atmosphere, annealing the substrate, and depositing graphene on both surfaces of the substrate by chemical vapor deposition. USE - Preparation of single crystal graphene used for forming graphene thin film (claimed). ADVANTAGE - The method enables economical and quick preparation of single crystal graphene.