▎ 摘　　要

NOVELTY - The flexible/stretchable semiconductor device includes a semiconductor layer formed on a flexible/stretchable substrate, and a graphene electrode formed on the semiconductor layer. The constant resistance between the semiconductor layer and the graphene electrode is decreased by removing the native oxide film formed between the semiconductor layer and the graphene electrode. USE - Flexible/stretchable semiconductor device such as single crystal silicon (Si) thin film transistor (TFT), Si FET, hybrid TFT, etc., used in electronic device (claimed) such as LCD, photovoltaic device, organic light-emitting device such as organic LED (OLED), sensor, memory, integrated circuit, head-up display device, etc. Can also be used in diode, laser device, micro electro-mechanical system (MEMS) device, nano electro-mechanical system (NEMS) device, LEDs, etc. ADVANTAGE - The electrical characteristic of the semiconductor device can be improved, and the problems including signaling transfer delay due to the contact resistance increment of the graphene electrode and semiconductor is solved, so that the yield and reliability of the semiconductor device can be improved. An electronic device having high flexibility, transparency and high optical-mechanical property can be provided. A flexible silicon thin film semiconductor device of large area can be manufactured easily. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) method for reducing contact resistance between semiconductor layer and graphene electrode; and (2) electronic device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram showing the manufacturing process of the graphene electrode used in a Si FET.