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出版物 APPLIED PHYSICS LETTERS（2）
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作者 ANDERSON TJ（2）

Step edge influence on barrier height and contact area in vertical heterojunctions between epitaxial graphene and n-type 4H-SiC

APPLIED PHYSICS LETTERS

TADJER MJ, ANDERSON TJ, MYERSWARD RL, WHEELER VD, NYAKITI LO, ROBINSON Z, EDDY CR, GASKILL DK, KOEHLER AD, HOBART KD, KUB FJ

Vertical conduction mechanism of the epitaxial graphene/n-type 4H-SiC heterojunction at cryogenic temperatures

APPLIED PHYSICS LETTERS

TADJER MJ, ANDERSON TJ, HOBART KD, NYAKITI LO, WHEELER VD, MYERSWARD RL, GASKILL DK, EDDY CR, KUB FJ, CALLE F