国家/地区 India（2）
关键词
出版物 APPLIED PHYSICS LET.（2）
出版时间 2012（2）
机构 INDIAN INST .（2）
作者 ASLAM M（2）

Work function tuning and improved gate dielectric reliability with multilayer graphene as a gate electrode for metal oxide semiconductor field effect device applications (vol 100, 233506, 2012)

APPLIED PHYSICS LETTERS

MISRA A, WAIKAR M, GOUR A, KALITA H, KHARE M, ASLAM M, KOTTANTHARAYIL A

Work function tuning and improved gate dielectric reliability with multilayer graphene as a gate electrode for metal oxide semiconductor field effect device applications

APPLIED PHYSICS LETTERS

MISRA A, WAIKAR M, GOUR A, KALITA H, KHARE M, ASLAM M, KOTTANTHARAYIL A