国家/地区 France（4）
关键词
出版物
出版时间 2013（2） 2014（2）
机构 UNIV PARIS 1.（3）
作者 BERRADA S（4）

A Klein-tunneling transistor with ballistic graphene

2D MATERIALS

WILMART Q, BERRADA S, TORRIN D, NGUYEN VH, FEVE G, BERROIR JM, DOLLFUS P, PLACAIS B

On the non-linear effects in graphene devices

JOURNAL OF PHYSICS DAPPLIED PHYSICS

NGUYEN VH, ALARCON A, BERRADA S, DO VN, STMARTIN J, QUERLIOZ D, BOURNEL A, DOLLFUS P

Graphene nanomesh transistor with high on/off ratio and good saturation behavior

APPLIED PHYSICS LETTERS

BERRADA S, NGUYEN VH, QUERLIOZ D, STMARTIN J, ALARCON A, CHASSAT C, BOURNEL A, DOLLFUS P

Pseudosaturation and Negative Differential Conductance in Graphene Field-Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

ALARCON A, NGUYEN VH, BERRADA S, QUERLIOZ D, SAINTMARTIN J, BOURNEL A, DOLLFUS P