国家/地区 Bangladesh（4） Japan（4）
关键词 GRAPHENE（3） RFMBE（2） VACANCY DEFECT（2）
VIBRATIONAL PROPERT.（2）
出版物
出版时间 2019（2） 2020（2） 2021（2）
机构 UNIV FUKUI（3） KHULNA UNIV .（2）
作者 BHUIYAN AG（8）

Interlayer vacancy effects on the phonon modes in AB stacked bilayer graphene nanoribbon

CURRENT APPLIED PHYSICS

ANINDYA KN, ISLAM MS, PARK J, BHUIYAN AG, HASHIMOTO A

Growth Mechanism of InN Nucleation Layers on Epitaxial Graphene Using Metal Organic Vapor Phase Epitaxy and Radio-Frequency Molecular Beam Epitaxy

CRYSTAL GROWTH DESIGN

BHUIYAN AG, ISHIMARU D, HASHIMOTO A

Deconvolution of Raman spectra of disordered monolayer graphene: an approach to probe the phonon modes

BULLETIN OF MATERIALS SCIENCE

ISLAM MS, ANINDYA KN, BHUIYAN AG, HASHIMOTO A

Fabrication of InN on epitaxial graphene using RF-MBE

JOURNAL OF APPLIED PHYSICS

ISHIMARU D, BHUIYAN AG, HASHIMOTO A

Polarized micro Raman scattering spectroscopy for curved edges of epitaxial graphene

APPLIED PHYSICS LETTERS

ISLAM MS, BHUIYAN AG, TANAKA S, MAKINO T, HASHIMOTO A

Numerical Analysis on Phonon Localization of Vacancy Type Disordered Graphene

JOURNAL OF CIRCUITS SYSTEMS COMPUTERS

ISLAM MS, RAHAMAN MT, BHUIYAN AG, HASHIMOTO A

RF-MBE growth and orientation control of GaN on epitaxial graphene

RESULTS IN PHYSICS

BHUIYAN AG, KAMADA Y, ISLAM MS, SYAMOTO R, ISHIMARU D, HASHIMOTO A

Growth of single crystalline Si on graphene using RF-MBE: Orientation control with an AlN interface layer

APPLIED SURFACE SCIENCE

BHUIYAN AG, TERAI T, KATSUZAKI T, TAKEDA N, HASHIMOTO A