国家/地区 Korea（12）
关键词 CVD GRAPHENE（2） GRAPHENE（2）
出版物 APPLIED PHYSICS LET.（4） SMALL（2）
出版时间 2014（4） 2015（2） 2018（2）
机构 KOREA ADV IN.（10）
作者 BONG JH（12）

Direct Graphene Transfer and Its Application to Transfer Printing Using Mechanically Controlled, Large Area Graphene/Copper Freestanding Layer

ADVANCED FUNCTIONAL MATERIALS

SEO J, KIM C, MA BS, LEE TI, BONG JH, OH JG, CHO BJ, KIM TS

A High-Performance Top-Gated Graphene Field-Effect Transistor with Excellent Flexibility Enabled by an iCVD Copolymer Gate Dielectric

SMALL

OH JG, PAK K, KIM CS, BONG JH, HWANG WS, IM SG, CHO BJ

Alleviation of fermi-level pinning effect at metal/germanium interface by the insertion of graphene layers

APPLIED PHYSICS LETTERS

BAEK SHC, SEO YJ, OH JG, PARK MGA, BONG JH, YOON SJ, SEO M, PARK SY, PARK BG, LEE SH

Facile graphene n-doping by wet chemical treatment for electronic applications

NANOSCALE

BONG JH, SUL O, YOON A, CHOI SY, CHO BJ

High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy

APPLIED PHYSICS LETTERS

OH JG, HONG SK, KIM CK, BONG JH, SHIN J, CHOI SY, CHO BJ

Work function tuning of metal/graphene stack electrode

APPLIED PHYSICS LETTERS

SONG SM, BONG JH, CHO BJ

Functionalized Graphene as an Ultrathin Seed Layer for the Atomic Layer Deposition of Conformal High-k Dielectrics on Graphene

ACS APPLIED MATERIALS INTERFACES

SHIN WC, BONG JH, CHOI SY, CHO BJ

Vertically Formed Graphene Stripe for 3D Field-Effect Transistor Applications

SMALL

HONG SK, BONG JH, CHO BJ, HWANG WS

Improved Drain Current Saturation and Voltage Gain in Graphene-on-Silicon Field Effect Transistors

SCIENTIFIC REPORTS

SONG SM, BONG JH, HWANG WS, CHO BJ

Wrinkle-free graphene with spatially uniform electrical properties grown on hot-pressed copper

NANO RESEARCH

MUN JH, OH JG, BONG JH, XU H, LOH KP, CHO BJ