国家/地区 Poland（10）
关键词
出版物 JOURNAL OF APPLIED .（4） ACTA PHYSICA POLONI.（2） PHYSICAL REVIEW B（2）
出版时间 2011（3） 2009（2） 2012（2） 2014（2）
机构 POLISH ACAD .（4） UNIV WARSAW（4） INST ELECT M.（2）
作者 BORYSIUK J（11）

Influence of a parallel electric field on the dispersion relation of graphene - A new route to Dirac logics

JOURNAL OF CRYSTAL GROWTH

KRUKOWSKI S, SOLTYS J, BORYSIUK J, PIECHOTA J

Structural defects in epitaxial graphene layers synthesized on C-terminated 4H-SiC (000(1)over-bar) surface-Transmission electron microscopy and density functional theory studies

JOURNAL OF APPLIED PHYSICS

BORYSIUK J, SOLTYS J, PIECHOTA J, KRUKOWSKI S, BARANOWSKI JM, STEPNIEWSKI R

Structural investigations of hydrogenated epitaxial graphene grown on 4H-SiC (0001)

APPLIED PHYSICS LETTERS

TOKARCZYK M, KOWALSKI G, MOZDZONEK M, BORYSIUK J, STEPNIEWSKI R, STRUPINSKI W, CIEPIELEWSKI P, BARANOWSKI JM

Experimental and theoretical investigation of graphene layers on SiC(000(1)under-bar) in different stacking arrangements

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

SOLTYS J, BORYSIUK J, PIECHOTA J, KRUKOWSKI S

Role of structure of C-terminated 4H-SiC(000(1)over-bar) surface in growth of graphene layers: Transmission electron microscopy and density functional theory studies

PHYSICAL REVIEW B

BORYSIUK J, SOLTYS J, BOZEK R, PIECHOTA J, KRUKOWSKI S, STRUPINSKI W, BARANOWSKI JM, STEPNIEWSKI R

Stacking sequence dependence of graphene layers on SiC (000(1)over-bar)-Experimental and theoretical investigation

JOURNAL OF APPLIED PHYSICS

BORYSIUK J, SOLTYS J, PIECHOTA J

Raman Studies of Defects in Graphene Grown on SiC

ACTA PHYSICA POLONICA A

GRODECKI K, BOZEK R, BORYSIUK J, STRUPINSKI W, WYSMOLEK A, STEPNIEWSKI R, BARANOWSKI JM

Magneto-optics of bilayer inclusions in multilayered epitaxial graphene on the carbon face of SiC

PHYSICAL REVIEW B

ORLITA M, FAUGERAS C, BORYSIUK J, BARANOWSKI JM, STRUPINSKI W, SPRINKLE M, BERGER C, DE HEER WA, BASKO DM, MARTINEZ G, POTEMSKI M

Transmission electron microscopy investigations of epitaxial graphene on C-terminated 4H-SiC

JOURNAL OF APPLIED PHYSICS

BORYSIUK J, BOZEK R, GRODECKI K, WYSMOLEK A, STRUPINSKI W, STEPNIEWSKI R, BARANOWSKI JM

Optical Absorption and Raman Scattering Studies of Few-Layer Epitaxial Graphene Grown on 4H-SiC Substrates

ACTA PHYSICA POLONICA A

GRODECKI K, DRABINSKA A, BOZEK R, WYSMOLEK A, KORONA KP, STRUPINSKI W, BORYSIUK J, STEPNIEWSKI R, BARANOWSKI JM