国家/地区 France（16） China（2）
关键词
出版物 APPLIED PHYSICS LET.（5） JOURNAL OF APPLIED .（4） JOURNAL OF PHYSICS .（2）
NANOTECHNOLOGY（2）
出版时间 2011（4） 2012（3） 2013（3） 2008（2） 2009（2）
机构 UNIV PARIS 1.（16） BEIHANG UNIV（2）
作者 BOURNEL A（18）

On the non-linear effects in graphene devices

JOURNAL OF PHYSICS DAPPLIED PHYSICS

NGUYEN VH, ALARCON A, BERRADA S, DO VN, STMARTIN J, QUERLIOZ D, BOURNEL A, DOLLFUS P

Graphene nanomesh transistor with high on/off ratio and good saturation behavior

APPLIED PHYSICS LETTERS

BERRADA S, NGUYEN VH, QUERLIOZ D, STMARTIN J, ALARCON A, CHASSAT C, BOURNEL A, DOLLFUS P

Bandgap nanoengineering of graphene tunnel diodes and tunnel transistors to control the negative differential resistance

JOURNAL OF COMPUTATIONAL ELECTRONICS

NGUYEN VH, SAINTMARTIN J, QUERLIOZ D, MAZZAMUTO F, BOURNEL A, NIQUET YM, DOLLFUS P

Pseudosaturation and Negative Differential Conductance in Graphene Field-Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

ALARCON A, NGUYEN VH, BERRADA S, QUERLIOZ D, SAINTMARTIN J, BOURNEL A, DOLLFUS P

Resonant tunnelling diodes based on graphene/h-BN heterostructure

JOURNAL OF PHYSICS DAPPLIED PHYSICS

NGUYEN VH, MAZZAMUTO F, BOURNEL A, DOLLFUS P

Graphene nanomesh-based devices exhibiting a strong negative differential conductance effect (vol 23, 065201, 2012)

NANOTECHNOLOGY

NGUYEN VH, MAZZAMUTO F, SAINTMARTIN J, BOURNEL A, DOLLFUS P

Graphene nanomesh-based devices exhibiting a strong negative differential conductance effect

NANOTECHNOLOGY

NGUYEN VH, MAZZAMUTO F, SAINTMARTIN J, BOURNEL A, DOLLFUS P

Resonant tunneling structures based on epitaxial graphene on SiC

SEMICONDUCTOR SCIENCE TECHNOLOGY

NGUYEN VH, BOURNEL A, DOLLFUS P

Giant effect of negative differential conductance in graphene nanoribbon p-n hetero-junctions

APPLIED PHYSICS LETTERS

NGUYEN VH, MAZZAMUTO F, SAINTMARTIN J, BOURNEL A, DOLLFUS P

Large peak-to-valley ratio of negative-differential-conductance in graphene p-n junctions

JOURNAL OF APPLIED PHYSICS

NGUYEN VH, BOURNEL A, DOLLFUS P