国家/地区 France（4） Spain（2）
关键词
出版物 APPLIED PHYSICS LET.（2）
出版时间 2010（3） 2011（2）
机构 UNIV MONTPEL.（2）
作者 CABONI A（6）

Quantum Hall effect in bottom-gated epitaxial graphene grown on the C-face of SiC

APPLIED PHYSICS LETTERS

JOUAULT B, CAMARA N, JABAKHANJI B, CABONI A, CONSEJO C, GODIGNON P, MAUDE DK, CAMASSEL J

Epitaxial Graphene Growth on alpha-SiC: Probing the Effect of Surface Orientation

NANOSCIENCE NANOTECHNOLOGY LETTERS

CAMARA N, JOUAULT B, CABONI A, TIBERJ A, GODIGNON P, CAMASSEL J

Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates

NANOSCALE RESEARCH LETTERS

CAMARA N, JOUAULT B, JABAKHANJI B, CABONI A, TIBERJ A, CONSEJO C, GODIGNON P, CAMASSEL J

Current status of self-organized epitaxial graphene ribbons on the C face of 6H-SiC substrates

JOURNAL OF PHYSICS DAPPLIED PHYSICS

CAMARA N, TIBERJ A, JOUAULT B, CABONI A, JABAKHANJI B, MESTRES N, GODIGNON P, CAMASSEL J

Growth of monolayer graphene on 8 degrees off-axis 4H-SiC (000-1) substrates with application to quantum transport devices

APPLIED PHYSICS LETTERS

CAMARA N, JOUAULT B, CABONI A, JABAKHANJI B, DESRAT W, PAUSAS E, CONSEJO C, MESTRES N, GODIGNON P, CAMASSEL J

Probing the electrical anisotropy of multilayer graphene on the Si face of 6H-SiC

PHYSICAL REVIEW B

JOUAULT B, JABAKHANJI B, CAMARA N, DESRAT W, TIBERJ A, HUNTZINGER JR, CONSEJO C, CABONI A, GODIGNON P, KOPELEVICH Y, CAMASSEL J