国家/地区 China（2）
关键词
出版物
出版时间 2019（2）
机构 HEBEI NORMAL UNIV（2）
作者 CHEN T（2）

Improved Resistive Memory Based on ZnO-Graphene Hybrids through Redox Process of Graphene Quantum Dots

PHYSICA STATUS SOLIDIRAPID RESEARCH LETTERS

CHEN T, GAO YJ, CHEN W, ZHAO X

Large magnetization modulation in ZnO-based memory devices with embedded graphene quantum dots

PHYSICAL CHEMISTRY CHEMICAL PHYSICS

CHEN T, CHEN W, LIU LF, WANG Y, ZHAO X