国家/地区 China（4）
关键词
出版物 APPLIED PHYSICS LET.（2）
出版时间 2020（4）
机构 CHINESE ACAD SCI（4）
作者 CHEN Y（4）

Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy (vol 117, 051601, 2020)

APPLIED PHYSICS LETTERS

CHEN Y, ZANG H, JIANG K, BEN JW, ZHANG SL, SHI ZM, JIA YP, LU W, SUN XJ, LI DB

Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy

APPLIED PHYSICS LETTERS

CHEN Y, ZANG H, JIANG K, BEN JW, ZHANG SL, SHI ZM, JIA YP, LU W, SUN XJ, LI DB

Structure and electronic properties of closed-ring defects in epitaxial graphene

MATERIALS RESEARCH EXPRESS

CHEN Y, LI MC, WANG QM, WANG GS, WEI X, SONG GF, KONG XM, XU Y, LIU Y

Preparation of Electrospun Gelatin Mat with Incorporated Zinc Oxide/Graphene Oxide and Its Antibacterial Activity

MOLECULES

LI HH, CHEN Y, LU WP, XU YS, GUO YC, YANG G