国家/地区 Taiwan（2）
关键词
出版物
出版时间 2016（3）
机构
作者 CHENG HC（3）

High-Current-Density Vertical-Tunneling Transistors from Graphene/Highly Doped Silicon Heterostructures

ADVANCED MATERIALS

LIU Y, SHENG JM, WU H, HE QY, CHENG HC, SHAKIR MI, HUANG Y, DUAN XF

A study of mechanical properties of multi-layered graphene using modified Nose-Hoover based molecular dynamics

COMPUTATIONAL MATERIALS SCIENCE

YU CF, CHEN KL, CHENG HC, CHEN WH

High-sensitivity extended-gate field-effect transistors as pH sensors with oxygen-modified reduced graphene oxide films coated on different reverse-pyramid silicon structures as sensing heads

JAPANESE JOURNAL OF APPLIED PHYSICS

LI YR, CHANG SH, CHANG CT, TSAI WL, CHIU YK, YANG PY, CHENG HC