国家/地区 Singapore（4）
关键词 GRAPHENE（2） HETEROJUNCTION（2） TUNNELING TRANSISTO.（2）
出版物
出版时间 2010（2） 2012（2）
机构 NATL UNIV SINGAPORE（4）
作者 CHIN SK（4）

Influence of contact doping on graphene nanoribbon heterojunction tunneling field effect transistors

SOLIDSTATE ELECTRONICS

DA HX, LAM KT, SAMUDRA GS, LIANG GC, CHIN SK

Graphene Nanoribbon Tunneling Field-Effect Transistors With a Semiconducting and a Semimetallic Heterojunction Channel

IEEE TRANSACTIONS ON ELECTRON DEVICES

DA HX, LAM KT, SAMUDRA G, CHIN SK, LIANG GC

A Simulation Study of Graphene-Nanoribbon Tunneling FET With Heterojunction Channel

IEEE ELECTRON DEVICE LETTERS

LAM KT, SEAH D, CHIN SK, KUMAR SB, SAMUDRA G, YEO YC, LIANG G

Effect of Ribbon Width and Doping Concentration on Device Performance of Graphene Nanoribbon Tunneling Field-Effect Transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

LAM KT, CHIN SK, SEAH DW, KUMAR SB, LIANG GC