国家/地区 Italy（7）
关键词 BORON DOPING（2） GRAPHENE RIBBON（2） MOBILITY GAP（2）
出版物 PHYSICAL REVIEW B（3）
出版时间 2008（4）
机构 UNIV PISA（3） NEST CNR INF.（2）
作者 CRESTI A（7）

Effect of the Channel Length on the Transport Characteristics of Transistors Based on Boron-Doped Graphene Ribbons

MATERIALS

MARCONCINI P, CRESTI A, ROCHE S

Atomistic Boron-Doped Graphene Field-Effect Transistors: A Route toward Unipolar Characteristics

ACS NANO

MARCONCINI P, CRESTI A, TRIOZON F, FIORI G, BIEL B, NIQUET YM, MACUCCI M, ROCHE S

Proposal for a graphene-based current nanoswitch

NANOTECHNOLOGY

CRESTI A

Valley-valve effect and even-odd chain parity in p-n graphene junctions

PHYSICAL REVIEW B

CRESTI A, GROSSO G, PARRAVICINI GP

Current profiles in gated graphene ribbons

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

CRESTI A, GROSSO G, PARRAVICINI GP

Electronic states and magnetotransport in unipolar and bipolar graphene ribbons

PHYSICAL REVIEW B

CRESTI A, GROSSO G, PARRAVICINI GP

Numerical study of electronic transport in gated graphene ribbons

PHYSICAL REVIEW B

CRESTI A, GROSSO G, PARRAVICINI GP