| 国家/地区 | China（3） |
| 关键词 | |
| 出版物 | |
| 出版时间 |
2013（4）
|
| 机构 | PEKING UNIV（3） |
| 作者 |
DAI L（4）
|
The evolution of Raman spectrum of graphene with the thickness of SiO2 capping layer on Si substrate
APPLIED PHYSICS LETTERS
LIU C, MA YG, LI WS, DAI L
SCIENTIFIC REPORTS
JEON IY, CHOI HJ, JU MJ, CHOI IT, LIM K, KO J, KIM HK, KIM JC, LEE JJ, SHIN D, JUNG SM, SEO JM, KIM MJ, PARK N, DAI L, BAEK JB
ADVANCED FUNCTIONAL MATERIALS
MENG H, LUO JX, WANG W, SHI ZJ, NIU QL, DAI L, QIN GG
NANOSCALE
GAO ZW, JIN WF, ZHOU Y, DAI Y, YU B, LIU C, XU WJ, LI YP, PENG HL, LIU ZF, DAI L