国家/地区 China（3）
关键词 SCHOTTKY BARRIER HEIGHT（4）
出版物 NANOMATERIALS（2）
出版时间 2020（2）
机构 GUIZHOU UNIV.（3）
作者 DING Z（4）

The external electric-field-induced Schottky-to-ohmic contact transition in graphene/As2S3 interface: A study by the first principles

INTERNATIONAL JOURNAL OF ENERGY RESEARCH

LIU XF, ZHANG ZC, LV B, DING Z, LUO ZJ

Van der Waals heterostructure of graphene and As2S3: Tuning the Schottky barrier height by vertical strain

JOURNAL OF CRYSTAL GROWTH

LIU XF, LV B, DING Z, LUO ZJ

The External Electric Field-Induced Tunability of the Schottky Barrier Height in Graphene/AlN Interface: A Study by First-Principles

NANOMATERIALS

LIU XF, ZHANG ZC, LV B, DING Z, LUO ZJ

Tunable Electronic Properties of Graphene/g-AlN Heterostructure: The Effect of Vacancy and Strain Engineering

NANOMATERIALS

LIU XF, ZHANG ZF, LUO ZJ, LV B, DING Z