国家/地区 Poland（2）
关键词 SILICON CARBIDE（2）
出版物
出版时间
机构
作者 DOBROWOLSKI A（2）

Highly-doped p-type few-layer graphene on UID off-axis homoepitaxial 4H-SiC

CURRENT APPLIED PHYSICS

CIUK T, KASZUB W, KOSCIEWICZ K, DOBROWOLSKI A, JAGIELLO J, CHAMRYGA A, GACA J, WOJCIK M, CZOLAK D, STANCZYK B, PRZYBOROWSKA K, KOZLOWSKI R, KOZUBAL M, MICHALOWSKI PP, SZARY MJ, KAMINSKI P

Contamination-induced inhomogeneity of noise sources distribution in Al2O3-passivated quasi-free-standing graphene on 4H-SiC(0001)

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

CIUK T, CIURA L, MICHALOWSKI PP, JAGIELLO J, DOBROWOLSKI A, PIETAK K, KALITA D, WZOREK M, BUDZICH R, CZOLAK D, KOLEK A