国家/地区 France（3）
关键词
出版物
出版时间 2013（3）
机构 UNIV PARIS 11（3）
作者 DOLLFUS P（3）

Graphene nanomesh transistor with high on/off ratio and good saturation behavior

APPLIED PHYSICS LETTERS

BERRADA S, NGUYEN VH, QUERLIOZ D, STMARTIN J, ALARCON A, CHASSAT C, BOURNEL A, DOLLFUS P

Bandgap nanoengineering of graphene tunnel diodes and tunnel transistors to control the negative differential resistance

JOURNAL OF COMPUTATIONAL ELECTRONICS

NGUYEN VH, SAINTMARTIN J, QUERLIOZ D, MAZZAMUTO F, BOURNEL A, NIQUET YM, DOLLFUS P

Pseudosaturation and Negative Differential Conductance in Graphene Field-Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

ALARCON A, NGUYEN VH, BERRADA S, QUERLIOZ D, SAINTMARTIN J, BOURNEL A, DOLLFUS P