国家/地区 China（3）
关键词
出版物
出版时间 2018（3）
机构 HENAN NORMAL.（2）
作者 DU J（3）

Out of plane stacking of InSe-based heterostructures towards high performance electronic and optoelectronic devices using a graphene electrode

JOURNAL OF MATERIALS CHEMISTRY C

GAO W, ZHENG ZQ, LI YT, XIA CX, DU J, ZHAO Y, LI JB

PtSe2/graphene hetero-multilayer: gate-tunable Schottky barrier height and contact type

NANOTECHNOLOGY

XIA CX, DU J, FANG LZ, LI XP, ZHAO X, SONG XH, WANG TX, LI JB

Enhanced Carrier Concentration and Electronic Transport by Inserting Graphene into van der Waals Heterostructures of Transition-Metal Dichalcogenides

PHYSICAL REVIEW APPLIED

XIA CX, XIONG WQ, XIAO WB, DU J, FANG LZ, LI JB, JIA Y