国家/地区 Iran（6）
关键词 TUNNELING TRANSISTO.（2）
出版物 IEEE TRANSACTIONS O.（2）
出版时间 2017（6）
机构 SHARIF UNIV .（4） ISLAMIC AZAD.（2）
作者 FAEZ R（6）

Performance comparison of ideal and defected bilayer graphene nanoribbon FETs

SUPERLATTICES MICROSTRUCTURES

SHAMLOO H, FAEZ R, NAZARI A

Numerical simulation of vertical tunneling transistor with bilayer graphene as source and drain regions

PHYSICA STATUS SOLIDI AAPPLICATIONS MATERIALS SCIENCE

HORRI A, FAEZ R, DARVISH G

Spin FET Based on Graphene Nanoribbon in the Presence of Surface Roughness

IEEE TRANSACTIONS ON ELECTRON DEVICES

CHAGHAZARDI Z, FAEZ R, TOUSKI SB, POURFATH M

Modeling of a Vertical Tunneling Transistor Based on Graphene-MoS2 Heterostructure

IEEE TRANSACTIONS ON ELECTRON DEVICES

HORRI A, FAEZ R, POURFATH M, DARVISH G

Minimum length modulator design with a graphene-based plasmonic waveguide

APPLIED OPTICS

GHAHRI MR, FAEZ R

A computational study of vertical tunneling transistors based on graphene-WS2 heterostructure

JOURNAL OF APPLIED PHYSICS

HORRI A, FAEZ R, POURFATH M, DARVISH G