国家/地区 China（8）
关键词
出版物 ACTA PHYSICA SINICA（2） APPLIED PHYSICS LET.（2）
出版时间 2014（8）
机构 HEBEI SEMICO.（4） BEIJING INST.（2）
作者 FENG ZH（8）

Preparation and electrical transport properties of quasi free standing bilayer graphene on SiC (0001) substrate by H intercalation

APPLIED PHYSICS LETTERS

YU C, LIU QB, LI J, LU WL, HE ZZ, CAI SJ, FENG ZH

Classical linear magnetoresistance in epitaxial graphene on SiC

APPLIED PHYSICS LETTERS

WANG WJ, GAO KH, LI ZQ, LIN T, LI J, YU C, FENG ZH

Preparation of multifunctional microchannel-network graphene foams

JOURNAL OF MATERIALS CHEMISTRY A

YAN J, DING Y, HU CG, CHENG HH, CHEN N, FENG ZH, ZHANG ZP, QU LT

An ultra clean self-aligned process for high maximum oscillation frequency graphene transistors

CARBON

FENG ZH, YU C, LI J, LIU QB, HE ZZ, SONG XB, WANG JJ, CAI SJ

Radio-Frequency Performance of Epitaxial Graphene Field-Effect Transistors on Sapphire Substrates

CHINESE PHYSICS LETTERS

LIU QB, YU C, LI J, SONG XB, HE ZZ, LU WL, GU GD, WANG YG, FENG ZH

The second-order combination Raman modes of bilayer graphene in the range of 1800-2150 cm(-1)

ACTA PHYSICA SINICA

LI QQ, ZHANG X, WU JB, LU Y, TAN PH, FENG ZH, LI J, WEI C, LIU QB

Quasi-equilibrium growth of monolayer epitaxial graphene on SiC (0001)

ACTA PHYSICA SINICA

YU C, LI J, LIU QB, CAI SJ, FENG ZH

All-in-one graphene fiber supercapacitor

NANOSCALE

HU Y, CHENG HH, ZHAO F, CHEN N, JIANG L, FENG ZH, QU LT