国家/地区 Italy（10）
关键词 GRAPHENE（12）
出版物 IEEE ELECTRON DEVIC.（3） IEEE TRANSACTIONS O.（2）
出版时间 2013（2） 2014（2） 2015（2）
机构 UNIV PISA（9）
作者 FIORI G（12）

Flexible One-Dimensional Metal-Insulator-Graphene Diode

ACS APPLIED ELECTRONIC MATERIALS

WANG ZX, UZLU B, SHAYGAN M, OTTO M, RIBEIRO M, MARIN EG, IANNACCONE G, FIORI G, ELSAYED MS, NEGRA R, NEUMAIER D

On Transport in Vertical Graphene Heterostructures

IEEE ELECTRON DEVICE LETTERS

ZHANG Q, FIORI G, IANNACCONE G

Bilayer Graphene Transistors for Analog Electronics

IEEE TRANSACTIONS ON ELECTRON DEVICES

FIORI G, NEUMAIER D, SZAFRANEK BN, IANNACCONE G

Multiscale Modeling for Graphene-Based Nanoscale Transistors

PROCEEDINGS OF THE IEEE

FIORI G, IANNACCONE G

Very Large Current Modulation in Vertical Heterostructure Graphene/hBN Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

FIORI G, BRUZZONE S, IANNACCONE G

Lateral Graphene-hBCN Heterostructures as a Platform for Fully Two-Dimensional Transistors

ACS NANO

FIORI G, BETTI A, BRUZZONE S, IANNACCONE G

Ab-initio simulations of deformation potentials and electron mobility in chemically modified graphene and two-dimensional hexagonal boron-nitride

APPLIED PHYSICS LETTERS

BRUZZONE S, FIORI G

On the Possibility of Tunable-Gap Bilayer Graphene FET

IEEE ELECTRON DEVICE LETTERS

FIORI G, IANNACCONE G

Simulation of graphene nanoribbon field-effect transistors

IEEE ELECTRON DEVICE LETTERS

FIORI G, IANNACCONE G

Carrier density dependence of 1/f noise in graphene explained as a result of the interplay between band-structure and inhomogeneities

JOURNAL OF STATISTICAL MECHANICSTHEORY EXPERIMENT

PELLEGRINI B, MARCONCINI P, MACUCCI M, FIORI G, BASSO G