| 国家/地区 |
Russia（5）
|
| 关键词 | GRAPHENE（2） |
| 出版物 | SEMICONDUCTORS（2） |
| 出版时间 | 2018（2） |
| 机构 | IOFFE INST（3） |
| 作者 |
GANICHEV SD（5）
|
SEMICONDUCTORS
VASILIEV YB, NOVIKOV SN, DANILOV SN, GANICHEV SD
On the Fabrication of Graphene p-n Junctions and Their Application for Detecting Terahertz Radiation
SEMICONDUCTORS
VASILEVA GY, VASILYEV YB, NOVIKOV SN, DANILOV SN, GANICHEV SD
APPLIED PHYSICS LETTERS
VASILYEV YB, VASILEVA GY, NOVIKOV S, TARASENKO SA, DANILOV SN, GANICHEV SD
PHYSICS REPORTSREVIEW SECTION OF PHYSICS LETTERS
GLAZOV MM, GANICHEV SD
NATURE PHYSICS
BANDURIN DA, MONCH E, KAPRALOV K, PHINNEY IY, LINDNER K, LIU S, EDGAR JH, DMITRIEV IA, JARILLOHERRERO P, SVINTSOV D, GANICHEV SD