国家/地区 Malaysia（2）
关键词
出版物
出版时间
机构 UNIV SAINS MALAYSIA（2）
作者 GHADIRY MH（2）

Modelling and Simulation of Saturation Region in Double Gate Graphene Nanoribbon Transistors

SEMICONDUCTORS

GHADIRY MH, NADI M, RAHMANI M, AHMADI MT, BIN ABD MANAF A

A model for length of saturation velocity region in double-gate Graphene nanoribbon transistors

MICROELECTRONICS RELIABILITY

GHADIRY MH, NADI M, AHMADI MT, ABD MANAF A