国家/地区 Spain（3）
关键词
出版物 APPLIED PHYSICS LETTERS（4）
出版时间 2008（2）
机构 CSIC（2）
作者 GODIGNON P（4）

Quantum Hall effect in bottom-gated epitaxial graphene grown on the C-face of SiC

APPLIED PHYSICS LETTERS

JOUAULT B, CAMARA N, JABAKHANJI B, CABONI A, CONSEJO C, GODIGNON P, MAUDE DK, CAMASSEL J

Growth of monolayer graphene on 8 degrees off-axis 4H-SiC (000-1) substrates with application to quantum transport devices

APPLIED PHYSICS LETTERS

CAMARA N, JOUAULT B, CABONI A, JABAKHANJI B, DESRAT W, PAUSAS E, CONSEJO C, MESTRES N, GODIGNON P, CAMASSEL J

Early stage formation of graphene on the C face of 6H-SiC

APPLIED PHYSICS LETTERS

CAMARA N, RIUS G, HUNTZINGER JR, TIBERJ A, MAGAUD L, MESTRES N, GODIGNON P, CAMASSEL J

Selective epitaxial growth of graphene on SiC

APPLIED PHYSICS LETTERS

CAMARA N, RIUS G, HUNTZINGER JR, TIBERJ A, MESTRES N, GODIGNON P, CAMASSEL J