国家/地区 Japan（2）
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机构 NATL INST MAT SCI（2）
作者 HAYASHI K（2）

Origin of the relatively low transport mobility of graphene grown through chemical vapor deposition

SCIENTIFIC REPORTS

SONG HS, LI SL, MIYAZAKI H, SATO S, HAYASHI K, YAMADA A, YOKOYAMA N, TSUKAGOSHI K

Wafer-scale fabrication of transistors using CVD-grown graphene and its application to inverter circuit

JAPANESE JOURNAL OF APPLIED PHYSICS

NAKAHARAI S, IIJIMA T, OGAWA S, YAGI K, HARADA N, HAYASHI K, KONDO D, TAKAHASHI M, LI SL, TSUKAGOSHI K, SATO S, YOKOYAMA N