国家/地区 China（3）
关键词 FIELDEFFECT TRANSIS.（2）
出版物
出版时间 2017（3）
机构 HEBEI SEMICO.（2）
作者 HE ZZ（3）

Improvement of the Frequency Characteristics of Graphene Field-Effect Transistors on SiC Substrate

IEEE ELECTRON DEVICE LETTERS

YU C, HE ZZ, SONG XB, LIU QB, HAN TT, DUN SB, WANG JJ, ZHOU CJ, GUO JC, LV YJ, FENG ZH, CAI SJ

Heterodyne detection at 216, 432, and 648 GHz based on bilayer graphene field-effect transistor with quasi-optical coupling

CARBON

QIN H, SUN JD, HE ZZ, LI XX, LI X, LIANG SX, YU C, FENG ZH, TU XC, JIN BB, CHEN J, WU PH

High-frequency noise characterization of graphene field effect transistors on SiC substrates

APPLIED PHYSICS LETTERS

YU C, HE ZZ, SONG XB, LIU QB, DUN SB, HAN TT, WANG JJ, ZHOU CJ, GUO JC, LV YJ, CAI SJ, FENG ZH