国家/地区 Taiwan（3） France（2）
关键词
出版物
出版时间 2014（3）
机构 CHANG GUNG U.（3） UNIV PARIS 0.（2）
作者 HO KI（5）

Atmospheric pressure route to epitaxial nitrogen-doped trilayer graphene on 4H-SiC (0001) substrate

APPLIED PHYSICS LETTERS

BOUTCHICH M, AREZKI H, ALAMARGUY D, HO KI, SEDIRI H, GUNES F, ALVAREZ J, KLEIDER JP, LAI CS, OUERGHI A

Fluorinated Graphene as High Performance Dielectric Materials and the Applications for Graphene Nanoelectronics

SCIENTIFIC REPORTS

HO KI, HUANG CH, LIAO JH, ZHANG WJ, LI LJ, LAI CS, SU CY

One- Step Formation of a Single Atomic- Layer Transistor by the Selective Fluorination of a Graphene Film

SMALL

HO KI, LIAO JH, HUANG CH, HSU CL, ZHANG WJ, LU AY, LI LJ, LAI CS, SU CY

Ultra-low-edge-defect graphene nanoribbons patterned by neutral beam

CARBON

HUANG CH, SU CY, OKADA T, LI LJ, HO KI, LI PW, CHEN IH, CHOU C, LAI CS, SAMUKAWA S

A Self-Aligned High-Mobility Graphene Transistor: Decoupling the Channel with Fluorographene to Reduce Scattering

ADVANCED MATERIALS

HO KI, BOUTCHICH M, SU CY, MOREDDU R, MARIANATHAN ESR, MONTES L, LAI CS