国家/地区 Vietnam（13） Iran（5）
关键词 GRAPHENE（6） ELECTRONIC PROPERTI.（5） ARMCHAIR GRAPHENE N.（4）
SCHOTTKY CONTACT（4） DFT CALCULATION（3） GREEN S FUNCTION（3）
MAGNETIC PHASE TRAN.（2）
出版物 SUPERLATTICES MICRO.（4） JOURNAL OF MAGNETIS.（2）
出版时间 2018（11） 2019（5） 2021（2）
机构 LE QUY DON T.（6） ISLAMIC AZAD.（4） AMIRKABIR UN.（2） HUE UNIV（2）
作者 HOI BD（20）

Effects of charged impurity scattering and substrate on the magneto-optical absorption properties in gapped monolayer graphene

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

HUONG PT, HOA L, PHAM VT, LONG HD, HIEU NN, PHUC HV, NGUYEN CV, HOI BD

Schottky anomaly and Neel temperature treatment of possible perturbed hydrogenated AA-stacked graphene, SiC, and h-BN bilayers

RSC ADVANCES

HOI BD, PHUONG LT, LAM VT, KHOA DQ, TIEN T, BINH NTT, PHUC HV, HIEU NN, NGUYEN CV

Strain and electric field engineering of electronic structures and Schottky contact of layered graphene/Ca(OH)(2) heterostructure

SUPERLATTICES MICROSTRUCTURES

NGUYEN CV, THUAN DV, PHUC HV, HOI BD, HIEU NN, AMIN B, PHAM KD

Modified tailoring the electronic phase and emergence of midstates in impurity-imbrued armchair graphene nanoribbons

SCIENTIFIC REPORTS

HIEN ND, MIRABBASZADEH K, DAVOUDINIYA M, HOI BD, PHUONG LTT, YARMOHAMMADI M

Opening a band gap in graphene by C-C bond alternation: a tight binding approach

MATERIALS RESEARCH EXPRESS

KHOA DQ, NGUYEN CV, BUI LM, PHUC HV, HOI BD, HIEU NV, NHA VQ, HUYNH N, NHAN LC, HIEU NN

Linear magneto-electron-light interaction in ultranarrow armchair graphene and boronitrene nanoribbons

DIAMOND RELATED MATERIALS

HIEN ND, MIRABBASZADEH K, YARMOHAMMADI M, HOI BD

Combined effect of the perpendicular magnetic field and dilute charged impurity on the electronic phase of bilayer AA-stacked hydrogenated graphene

PHYSICS LETTERS A

HOI BD, YARMOHAMMADI M

First principles study on the electronic properties and Schottky barrier of Graphene/InSe heterostructure

SUPERLATTICES MICROSTRUCTURES

PHAM KD, HIEU NN, ILYASOV VV, PHUC HV, HOI BD, FEDDI E, THUAN NV, NGUYEN CV

First principles study of the electronic properties and Schottky barrier in vertically stacked graphene on the Janus MoSeS under electric field

COMPUTATIONAL MATERIALS SCIENCE

PHAM KD, HIEU NN, PHUC HV, HOI BD, ILYSOV VV, AMIN B, NGUYEN CV

Tuning the Electronic and Optical Properties of Two-Dimensional Graphene-like Nanosheet by Strain Engineering

JOURNAL OF ELECTRONIC MATERIALS

PHUC HV, TUAN VV, HIEU NN, ILYASOV VV, FEDOROV IA, HOI BD, PHUONG LTT, HIEU NV, FEDDI E, NGUYEN CV