国家/地区 China（2）
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作者 HU GL（2）

Bending Stability of Ferroelectric Gated Graphene Field Effect Transistor for Flexible Electronics

MATERIALS

HU GL, SHEN YC, SHEN L, MA CR, LIU M

Improving High-Temperature Energy Storage Performance of Silicon-Integrated Oxide Film Capacitors via Inserting a Graphene Buffer Layer

IEEE ELECTRON DEVICE LETTERS

JIN J, MA CAS, HU GL, JIN M, FAN QL, MA CR, LIU M