国家/地区 Usa（17）
关键词 GRAPHENE（7） CVD（3） RAMAN（2）
出版物 APPLIED PHYSICS LET.（2） JOURNAL OF NANOSCIE.（2） NANOTECHNOLOGY（2）
出版时间 2014（4） 2012（2） 2013（2） 2016（2） 2017（2） 2019（2）
机构 CORNELL UNIV（9） UNIV N TEXAS（2）
作者 HWANG J（17）

First-principles study of metal-graphene edge contact for ballistic Josephson junction

PHYSICAL REVIEW MATERIALS

LEE Y, HWANG J, ZHANG F, CHO K

Magnetic graphene oxide-nano zero valent iron (GO-nZVI) nanohybrids synthesized using biocompatible cross-linkers for methylene blue removal

RSC ADVANCES

MEHRABI N, MASUD A, AFOLABI M, HWANG J, ORTIZ GAC, AICH N

Phonon softening and failure of graphene under tensile strain

SOLID STATE COMMUNICATIONS

HWANG J, IHM J, KIM KS, CHA MH

Electrical Characteristics of Multilayer MoS2 FET's with MoS2/Graphene Heterojunction Contacts

NANO LETTERS

KWAK JY, HWANG J, CALDERON B, ALSALMAN H, MUNOZ N, SCHUTTER B, SPENCER MG

Metal Free Growth of Graphene on Quartz Substrate Using Chemical Vapor Deposition (CVD)

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

HWANG J, KIM M, CHA HY, SPENCER MG, LEE JW

Large scale patternable 3-dimensional carbon nanotube-graphene structure for flexible Li-ion battery

CARBON

KANG C, BASKARAN R, HWANG J, KU BC, CHOI W

CVD growth of SiC on sapphire substrate and graphene formation from the epitaxial SiC

JOURNAL OF CRYSTAL GROWTH

HWANG J, KIM M, SHIELDS VB, SPENCER MG

van der Waals Epitaxial Growth of Graphene on Sapphire by Chemical Vapor Deposition without a Metal Catalyst

ACS NANO

HWANG J, KIM M, CAMPBELL D, ALSALMAN HA, KWAK JY, SHIVARAMAN S, WOLL AR, SINGH AK, HENNIG RG, GORANTLA S, RUMMELI MH, SPENCER MG

Improvement of carrier mobility of top-gated SiC epitaxial graphene transistors using a PVA dielectric buffer layer

NANOTECHNOLOGY

KIM M, HWANG J, LEPAK LA, LEE JW, SPENCER MG, TIWARI S

SiC surface orientation and Si loss rate effects on epitaxial graphene

NANOSCALE RESEARCH LETTERS

KIM M, HWANG J, SHIELDS VB, TIWARI S, SPENCER MG, LEE JW