国家/地区 Korea（4）
关键词
出版物
出版时间 2016（4）
机构 SAMSUNG ADV .（2）
作者 HWANG S（4）

A facile method for the synthesis of transfer-free graphene from co-deposited nickel-carbon layers

CARBON

AN S, LEE GH, JANG SW, HWANG S, LIM SH, HAN S

Physisorbed-precursor-assisted atomic layer deposition of reliable ultrathin dielectric films on inert graphene surfaces for low-power electronics

2D MATERIALS

JEONG SJ, KIM HW, HEO J, LEE MH, SONG HJ, KU J, LEE Y, CHO Y, JEON W, SUH H, HWANG S, PARK S

Synthesis of sulfur-doped graphene by using Near-infrared chemical-vapor deposition

JOURNAL OF THE KOREAN PHYSICAL SOCIETY

CHOI H, JO HH, HWANG S, JEON M, KIM JH

Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors

SCIENTIFIC REPORTS

JEONG SJ, GU Y, HEO J, YANG J, LEE CS, LEE MH, LEE Y, KIM H, PARK S, HWANG S