国家/地区 Sweden（3）
关键词
出版物
出版时间 2013（4）
机构 LINKOPING UN.（3）
作者 IAKIMOV T（4）

Growth of large area monolayer graphene on 3C-SiC and a comparison with other SiC polytypes

CARBON

YAZDI GR, VASILIAUSKAS R, IAKIMOV T, ZAKHAROV A, SYVAJARVI M, YAKIMOVA R

Large-area microfocal spectroscopic ellipsometry mapping of thickness and electronic properties of epitaxial graphene on Si- and C-face of 3C-SiC(111)

APPLIED PHYSICS LETTERS

DARAKCHIEVA V, BOOSALIS A, ZAKHAROV AA, HOFMANN T, SCHUBERT M, TIWALD TE, IAKIMOV T, VASILIAUSKAS R, YAKIMOVA R

On the Differing Sensitivity to Chemical Gating of Single and Double Layer Epitaxial Graphene Explored Using Scanning Kelvin Probe Microscopy

ACS NANO

PEARCE R, ERIKSSON J, IAKIMOV T, HULTMAN L, SPETZ AL, YAKIMOVA R

Is the Registry Between Adjacent Graphene Layers Grown on C-Face SiC Different Compared to That on Si-Face SiC

CRYSTALS

JOHANSSON LI, XIA C, HASSAN JU, IAKIMOV T, ZAKHAROV AA, WATCHARINYANON S, YAKIMOVA R, JANZEN E, VIROJANADARA C