国家/地区 France（7） Spain（2）
关键词
出版物 PHYSICAL REVIEW B（5） APPLIED PHYSICS LET.（2） JOURNAL OF PHYSICS .（2）
出版时间 2010（3） 2014（3） 2011（2）
机构 UNIV MONTPEL.（6）
作者 JABAKHANJI B（10）

Magnetoresistance of disordered graphene: From low to high temperatures

PHYSICAL REVIEW B

JABAKHANJI B, KAZAZIS D, DESRAT W, MICHON A, PORTAIL M, JOUAULT B

Quantum Hall effect of self-organized graphene monolayers on the C-face of 6H-SiC

JOURNAL OF PHYSICS DAPPLIED PHYSICS

JABAKHANJI B, CONSEJO C, CAMARA N, DESRAT W, GODIGNON P, JOUAULT B

Tuning the transport properties of graphene films grown by CVD on SiC(0001): Effect of in situ hydrogenation and annealing

PHYSICAL REVIEW B

JABAKHANJI B, MICHON A, CONSEJO C, DESRAT W, PORTAIL M, TIBERJ A, PAILLET M, ZAHAB A, CHEYNIS F, LAFONT F, SCHOPFER F, POIRIER W, BERTRAN F, LE FEVRE P, TALEBIBRAHIMI A, KAZAZIS D, ESCOFFIER W, CAMARGO BC, KOPELEVICH Y, CAMASSEL J, JOUAULT B

Quantum Hall effect in bottom-gated epitaxial graphene grown on the C-face of SiC

APPLIED PHYSICS LETTERS

JOUAULT B, CAMARA N, JABAKHANJI B, CABONI A, CONSEJO C, GODIGNON P, MAUDE DK, CAMASSEL J

Interplay between interferences and electron-electron interactions in epitaxial graphene

PHYSICAL REVIEW B

JOUAULT B, JABAKHANJI B, CAMARA N, DESRAT W, CONSEJO C, CAMASSEL J

Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates

NANOSCALE RESEARCH LETTERS

CAMARA N, JOUAULT B, JABAKHANJI B, CABONI A, TIBERJ A, CONSEJO C, GODIGNON P, CAMASSEL J

Current status of self-organized epitaxial graphene ribbons on the C face of 6H-SiC substrates

JOURNAL OF PHYSICS DAPPLIED PHYSICS

CAMARA N, TIBERJ A, JOUAULT B, CABONI A, JABAKHANJI B, MESTRES N, GODIGNON P, CAMASSEL J

Growth of monolayer graphene on 8 degrees off-axis 4H-SiC (000-1) substrates with application to quantum transport devices

APPLIED PHYSICS LETTERS

CAMARA N, JOUAULT B, CABONI A, JABAKHANJI B, DESRAT W, PAUSAS E, CONSEJO C, MESTRES N, GODIGNON P, CAMASSEL J

Probing the electrical anisotropy of multilayer graphene on the Si face of 6H-SiC

PHYSICAL REVIEW B

JOUAULT B, JABAKHANJI B, CAMARA N, DESRAT W, TIBERJ A, HUNTZINGER JR, CONSEJO C, CABONI A, GODIGNON P, KOPELEVICH Y, CAMASSEL J

Magnetic field driven ambipolar quantum Hall effect in epitaxial graphene close to the charge neutrality point

PHYSICAL REVIEW B

NACHAWATY A, YANG M, DESRAT W, NANOT S, JABAKHANJI B, KAZAZIS D, YAKIMOVA R, CRESTI A, ESCOFFIER W, JOUAULT B