国家/地区 China（3）
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出版时间
机构 UNIV SCI TECHNOL CHINA（4）
作者 JIN S（4）

Chemical Vapor Deposition Growth of Bernal-Stacked Bilayer Graphene by Edge-Selective Etching with H2O

CHEMISTRY OF MATERIALS

QI ZK, SHI HH, ZHAO MX, JIN HC, JIN S, KONG XH, RUOFF RS, QIN SY, XUE JM, JI HX

Atom-Thick Interlayer Made of CVD-Grown Graphene, Film on Separator for Advanced Lithium-Sulfur Batteries

ACS APPLIED MATERIALS INTERFACES

DU ZZ, GUO CK, WANG LJ, HU AJ, JIN S, ZHANG TM, JIN HC, QI ZK, XIN S, KONG XH, GUO YG, JI HX, WAN LJ

The Origin of Improved Electrical Double-Layer Capacitance by Inclusion of Topological Defects and Dopants in Graphene for Supercapacitors

ANGEWANDTE CHEMIEINTERNATIONAL EDITION

CHEN JF, HAN YL, KONG XH, DENG XZ, PARK HJ, GUO YL, JIN S, QI ZK, LEE Z, QIAO ZH, RUOFF RS, JI HX

A robust hydrogen evolution catalyst based on crystalline nickel phosphide nanoflakes on three-dimensional graphene/nickel foam: high performance for electrocatalytic hydrogen production from pH 0-14

JOURNAL OF MATERIALS CHEMISTRY A

HAN A, JIN S, CHEN HL, JI HX, SUN ZJ, DU PW