国家/地区 Germany（14）
关键词 GRAPHENE（2）
出版物 APPLIED PHYSICS LET.（3） NATURE MATERIALS（2） PHYSICAL REVIEW B（2）
出版时间 2012（5） 2011（4） 2013（2）
机构 UNIV ERLANGEN NURNBERG（14）
作者 JOBST J（14）

Detection of the Kondo effect in the resistivity of graphene: Artifacts and strategies

PHYSICAL REVIEW B

JOBST J, KISSLINGER F, WEBER HB

Robust Graphene Membranes in a Silicon Carbide Frame

ACS NANO

WALDMANN D, BUTZ B, BAUER S, ENGLERT JM, JOBST J, ULLMANN K, FROMM F, AMMON M, ENZELBERGEE M, HIRSCH A, MAIER S, SCHMUKI P, SEYLLER T, SPIECKER E, WEBERT HB

Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics

NATURE COMMUNICATIONS

HERTEL S, WALDMANN D, JOBST J, ALBERT A, ALBRECHT M, RESHANOV S, SCHONER A, KRIEGER M, WEBER HB

Origin of logarithmic resistance correction in graphene

NATURE PHYSICS

JOBST J, WEBER HB

Implanted bottom gate for epitaxial graphene on silicon carbide

JOURNAL OF PHYSICS DAPPLIED PHYSICS

WALDMANN D, JOBST J, FROMM F, SPECK F, SEYLLER T, KRIEGER M, WEBER HB

A switch for epitaxial graphene electronics: Utilizing the silicon carbide substrate as transistor channel

APPLIED PHYSICS LETTERS

KRACH F, HERTEL S, WALDMANN D, JOBST J, KRIEGER M, RESHANOV S, SCHONER A, WEBER HB

Electron-Electron Interaction in the Magnetoresistance of Graphene

PHYSICAL REVIEW LETTERS

JOBST J, WALDMANN D, GORNYI IV, MIRLIN AD, WEBER HB

The quasi-free-standing nature of graphene on H-saturated SiC(0001)

APPLIED PHYSICS LETTERS

SPECK F, JOBST J, FROMM F, OSTLER M, WALDMANN D, HUNDHAUSEN M, WEBER HB, SEYLLER T

Transport properties of high-quality epitaxial graphene on 6H-SiC(0001)

SOLID STATE COMMUNICATIONS

JOBST J, WALDMANN D, SPECK F, HIRNER R, MAUDE DK, SEYLLER T, WEBER HB

Current annealing and electrical breakdown of epitaxial graphene

APPLIED PHYSICS LETTERS

HERTEL S, KISSLINGER F, JOBST J, WALDMANN D, KRIEGER M, WEBER HB