国家/地区 France（14） Italy（2） Lebanon（2） Poland（2）
Spain（2）
关键词 GRAPHENE（4） JOSEPHSON EFFECT（2） SILICON CARBIDE（2）
出版物 PHYSICAL REVIEW B（8） APPLIED PHYSICS LET.（2） JOURNAL OF PHYSICS .（2）
JOURNAL OF SUPERCON.（2）
出版时间 2017（4） 2010（3） 2011（3） 2014（3） 2015（2） 2016（2）
机构 UNIV MONTPEL.（6） UNIV MONTPEL.（5） LNE LAB NATL.（2）
作者 JOUAULT B（22）

Thermal transport driven by charge imbalance in graphene in a magnetic field close to the charge neutrality point at low temperature: Nonlocal resistance

PHYSICAL REVIEW B

TAGLIACOZZO A, CAMPAGNANO G, GIULIANO D, LUCIGNANO P, JOUAULT B

Large nonlocality in macroscopic Hall bars made of epitaxial graphene

PHYSICAL REVIEW B

NACHAWATY A, YANG M, NANOT S, KAZAZIS D, YAKIMOVA R, ESCOFFIER W, JOUAULT B

Magnetoresistance of disordered graphene: From low to high temperatures

PHYSICAL REVIEW B

JABAKHANJI B, KAZAZIS D, DESRAT W, MICHON A, PORTAIL M, JOUAULT B

Quantum Hall effect of self-organized graphene monolayers on the C-face of 6H-SiC

JOURNAL OF PHYSICS DAPPLIED PHYSICS

JABAKHANJI B, CONSEJO C, CAMARA N, DESRAT W, GODIGNON P, JOUAULT B

Tuning the transport properties of graphene films grown by CVD on SiC(0001): Effect of in situ hydrogenation and annealing

PHYSICAL REVIEW B

JABAKHANJI B, MICHON A, CONSEJO C, DESRAT W, PORTAIL M, TIBERJ A, PAILLET M, ZAHAB A, CHEYNIS F, LAFONT F, SCHOPFER F, POIRIER W, BERTRAN F, LE FEVRE P, TALEBIBRAHIMI A, KAZAZIS D, ESCOFFIER W, CAMARGO BC, KOPELEVICH Y, CAMASSEL J, JOUAULT B

Quantum Hall effect in bottom-gated epitaxial graphene grown on the C-face of SiC

APPLIED PHYSICS LETTERS

JOUAULT B, CAMARA N, JABAKHANJI B, CABONI A, CONSEJO C, GODIGNON P, MAUDE DK, CAMASSEL J

Interplay between interferences and electron-electron interactions in epitaxial graphene

PHYSICAL REVIEW B

JOUAULT B, JABAKHANJI B, CAMARA N, DESRAT W, CONSEJO C, CAMASSEL J

Epitaxial Graphene Growth on alpha-SiC: Probing the Effect of Surface Orientation

NANOSCIENCE NANOTECHNOLOGY LETTERS

CAMARA N, JOUAULT B, CABONI A, TIBERJ A, GODIGNON P, CAMASSEL J

Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates

NANOSCALE RESEARCH LETTERS

CAMARA N, JOUAULT B, JABAKHANJI B, CABONI A, TIBERJ A, CONSEJO C, GODIGNON P, CAMASSEL J

Current status of self-organized epitaxial graphene ribbons on the C face of 6H-SiC substrates

JOURNAL OF PHYSICS DAPPLIED PHYSICS

CAMARA N, TIBERJ A, JOUAULT B, CABONI A, JABAKHANJI B, MESTRES N, GODIGNON P, CAMASSEL J