国家/地区 Korea（4）
关键词 GRAPHENE（3） GAUSSIAN DISTRIBUTI.（2） GE（2）
NTYPE GE（2） SCHOTTKY BARRIER DI.（2）
出版物 JOURNAL OF ALLOYS C.（2）
出版时间 2015（2）
机构 CHONBUK NATL.（5）
作者 KHURELBAATAR Z（5）

Modification of Schottky barrier properties of Au/n-type Ge Schottky barrier diode using monolayer graphene interlayer

JOURNAL OF ALLOYS COMPOUNDS

KHURELBAATAR Z, KIL YH, YUN HJ, SHIM KH, NAM JT, KIM KS, LEE SK, CHOI CJ

Transparent and flexible ultraviolet photoconductors based on solution-processed graphene quantum dots on reduced graphene oxide films

MATERIALS RESEARCH BULLETIN

THANH DT, KO KB, KHURELBAATAR Z, CHOI CJ, HONG CH, CUONG TV

Schottky barrier parameters and low frequency noise characteristics of graphene-germanium Schottky barrier diode

SUPERLATTICES MICROSTRUCTURES

KHURELBAATAR Z, KIL YH, SHIM KH, CHO H, KIM MJ, LEE SN, JEONG JC, HONG H, CHOI CJ

Temperature dependent current-voltage characteristics of Au/n-type Ge Schottky barrier diodes with graphene interlayer

JOURNAL OF ALLOYS COMPOUNDS

KHURELBAATAR Z, KANG MS, SHIM KH, YUN HJ, LEE J, HONG H, CHANG SY, LEE SN, CHOI CJ

Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier Diode

JOURNAL OF SEMICONDUCTOR TECHNOLOGY SCIENCE

KHURELBAATAR Z, KIL YH, SHIM KH, CHO H, KIM MJ, KIM YT, CHOI CJ