国家/地区 Usa（10）
关键词 GRAPHENE（5） HETEROSTRUCTURE（4） NEGATIVE DIFFERENTI.（3）
RESONANT TUNNELING（3） BAND OFFSET（2） BILAYER GRAPHENE（2）
HEXAGONAL BORON NIT.（2）
出版物 NANO LETTERS（4） ACS NANO（2）
出版时间 2014（3） 2015（3） 2017（2）
机构 UNIV TEXAS AUSTIN（10）
作者 KIM K（10）

Strongly Enhanced Tunneling at Total Charge Neutrality in Double-Bilayer Graphene-WSe2 Heterostructures

PHYSICAL REVIEW LETTERS

BURG GW, PRASAD N, KIM K, TANIGUCHI T, WATANABE K, MACDONALD AH, REGISTER LF, TUTUC E

Oxidized Titanium as a Gate Dielectric for Graphene Field Effect Transistors and Its Tunneling Mechanisms

ACS NANO

CORBET CM, MCCLELLAN C, KIM K, SONDE S, TUTUC E, BANERJEE SK

Chemical potential and quantum Hall ferromagnetism in bilayer graphene

SCIENCE

LEE K, FALLAHAZAD B, XUE JM, DILLEN DC, KIM K, TANIGUCHI T, WATANABE K, TUTUC E

Band Offset and Negative Compressibility in Graphene-MoS2 Heterostructures

NANO LETTERS

LARENTIS S, TOLSMA JR, FALLAHAZAD B, DILLEN DC, KIM K, MACDONALD AH, TUTUC E

Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene-WSe2 Heterostructures

NANO LETTERS

BURG GW, PRASAD N, FALLAHAZAD B, VALSARAJ A, KIM K, TANIGUCHI T, WATANABE K, WANG QX, KIM MJ, REGISTER LF, TUTUC E

Tunable moire bands and strong correlations in small-twist-angle bilayer graphene

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

KIM K, DASILVA A, HUANG S, FALLAHAZAD B, LARENTIS S, TANIGUCHI T, WATANABE K, LEROY BJ, MACDONALD AH, TUTUC E

Effects of Electrode Layer Band Structure on the Performance of Multilayer Graphene-hBN-Graphene Interlayer Tunnel Field Effect Transistors

NANO LETTERS

KANG S, PRASAD N, MOVVA HCP, RAI A, KIM K, MOU XH, TANIGUCHI T, WATANABE K, REGISTER LF, TUTUC E, BANERJEE SK

Band Alignment in WSe2-Graphene Heterostructures

ACS NANO

KIM K, LARENTIS S, FALLAHAZAD B, LEE K, XUE JM, DILLEN DC, CORBET CM, TUTUC E

Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET

IEEE ELECTRON DEVICE LETTERS

KANG S, FALLAHAZAD B, LEE K, MOVVA H, KIM K, CORBET CM, TANIGUCHI T, WATANABE K, COLOMBO L, REGISTER LF, TUTUC E, BANERJEE SK

Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures

NANO LETTERS

FALLAHAZAD B, LEE K, KANG S, XUE JM, LARENTIS S, CORBET C, KIM K, MOVVA HCP, TANIGUCHI T, WATANABE K, REGISTER LF, BANERJEE SK, TUTUC E