国家/地区 Usa（4）
关键词 HETEROSTRUCTURE（3） GRAPHENE（2） NEGATIVE DIFFERENTI.（2）
RESONANT TUNNELING（2）
出版物 NANO LETTERS（4）
出版时间
机构 UNIV TEXAS AUSTIN（4）
作者 KIM K（4）

Band Offset and Negative Compressibility in Graphene-MoS2 Heterostructures

NANO LETTERS

LARENTIS S, TOLSMA JR, FALLAHAZAD B, DILLEN DC, KIM K, MACDONALD AH, TUTUC E

Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene-WSe2 Heterostructures

NANO LETTERS

BURG GW, PRASAD N, FALLAHAZAD B, VALSARAJ A, KIM K, TANIGUCHI T, WATANABE K, WANG QX, KIM MJ, REGISTER LF, TUTUC E

Effects of Electrode Layer Band Structure on the Performance of Multilayer Graphene-hBN-Graphene Interlayer Tunnel Field Effect Transistors

NANO LETTERS

KANG S, PRASAD N, MOVVA HCP, RAI A, KIM K, MOU XH, TANIGUCHI T, WATANABE K, REGISTER LF, TUTUC E, BANERJEE SK

Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures

NANO LETTERS

FALLAHAZAD B, LEE K, KANG S, XUE JM, LARENTIS S, CORBET C, KIM K, MOVVA HCP, TANIGUCHI T, WATANABE K, REGISTER LF, BANERJEE SK, TUTUC E