国家/地区 Japan（6）
关键词 EPITAXIAL GRAPHENE（2） MICROWAVE ANNEALING（2）
出版物 JAPANESE JOURNAL OF.（3）
出版时间 2016（2）
机构 TOHOKU UNIV（5）
作者 KIM KS（6）

Direct Formation of Solution-based Al2O3 on Epitaxial Graphene Surface for Sensor Applications

SENSORS MATERIALS

KIM KS, FUKIDOME H, SUEMITSU M

A table-top formation of bilayer quasi-free-standing epitaxial-graphene on SiC(0001) by microwave annealing in air

CARBON

KIM KS, PARK GH, FUKIDOME H, TAKASHI S, TAKUSHI I, FUMIO K, IWAO M, SUEMITSU M

Solution-based formation of high-quality gate dielectrics on epitaxial graphene by microwave-assisted annealing

JAPANESE JOURNAL OF APPLIED PHYSICS

KIM KS, PARK GH, FUKIDOME H, SUEMITSU T, OTSUJI T, CHO WJ, SUEMITSU M

Solution-processed Al2O3 gate dielectrics for graphene field-effect transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

PARK GH, KIM KS, FUKIDOME H, SUEMITSU T, OTSUJI T, CHO WJ, SUEMITSU M

High-performance self-aligned graphene transistors fabricated using contamination-and defect-free process

JAPANESE JOURNAL OF APPLIED PHYSICS

PARK GH, KIM KS, FUKIDOME H, SUEMITSU T, OTSUJI T, CHO WJ, SUEMITSU M

Extrinsic Surface Magnetic Anisotropy Contribution in Pt/Y3Fe5O12 Interface in Longitudinal Spin Seebeck Effect by Graphene Interlayer

ACS APPLIED MATERIALS INTERFACES

LEE WY, PARK NW, KANG MS, KIM GS, YOON YG, LEE S, CHOI KY, KIM KS, KIM JH, SEONG MJ, KIKKAWA T, SAITOH E, LEE SK