国家/地区 Korea（2）
关键词 FIELDEFFECT TRANSISTOR（3）
出版物
出版时间
机构
作者 KIM P（3）

Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures

ACS NANO

LEE GH, YU YJ, CUI X, PETRONE N, LEE CH, CHOI MS, LEE DY, LEE C, YOO WJ, WATANABE K, TANIGUCHI T, NUCKOLLS C, KIM P, HONE J

Single-Gate Bandgap Opening of Bilayer Graphene by Dual Molecular Doping

ADVANCED MATERIALS

PARK J, JO SB, YU YJ, KIM Y, YANG W, LEE WH, KIM HH, HONG BH, KIM P, CHO K, KIM KS

Tunable Electrical and Optical Characteristics in Mono layer Graphene and Few-Layer MoS2 Heterostructure Devices

NANO LETTERS

RATHI S, LEE I, LIM D, WANG JW, OCHIAI Y, AOKI N, WATANABE K, TANIGUCHI T, LEE GH, YU YJ, KIM P, KIM GH