国家/地区 Korea（9） Usa（8）
关键词 GRAPHENE（5） MONOLAYER（2）
出版物 APPLIED PHYSICS LETTERS（17）
出版时间 2012（4） 2010（2） 2013（2） 2015（2） 2017（2）
机构 UNIV TEXAS A.（3） GEORGIA INST.（2） KYUNG HEE UN.（2）
作者 KIM S（17）

Computational study of heterojunction graphene nanoribbon tunneling transistors with p-d orbital tight-binding method

APPLIED PHYSICS LETTERS

KIM S, LUISIER M, BOYKIN TB, KLIMECK G

Flow-induced voltage generation in non-ionic liquids over monolayer graphene

APPLIED PHYSICS LETTERS

LEE SH, JUNG Y, KIM S, HAN CS

Size-dependence of Raman scattering from graphene quantum dots: Interplay between shape and thickness

APPLIED PHYSICS LETTERS

KIM S, SHIN DH, KIM CO, KANG SS, JOO SS, CHOI SH, HWANG SW, SONE C

Size-dependent radiative decay processes in graphene quantum dots

APPLIED PHYSICS LETTERS

KIM S, SHIN DH, KIM CO, KANG SS, KIM JM, CHOI SH, JIN LH, CHO YH, HWANG SW, SONE C

Gate-dependent photoconductivity of single layer graphene grafted with metalloporphyrin molecules

APPLIED PHYSICS LETTERS

CHOI MS, LEE DJ, LEE SJ, HWANG DH, LEE JH, AOKI N, OCHIAI Y, KIM HJ, WHANG D, KIM S, HWANG SW

Scaling of Al2O3 dielectric for graphene field-effect transistors

APPLIED PHYSICS LETTERS

FALLAHAZAD B, LEE K, LIAN G, KIM S, CORBET CM, FERRER DA, COLOMBO L, TUTUC E

Impact of gate work-function on memory characteristics in Al2O3/HfOx/Al2O3/graphene charge-trap memory devices

APPLIED PHYSICS LETTERS

LEE S, SONG EB, KIM S, SEO DH, SEO S, KANG TW, WANG KL

Nonvolatile resistive switching in Pr0.7Ca0.3MnO3 devices using multilayer graphene electrodes

APPLIED PHYSICS LETTERS

LEE W, JO G, LEE S, PARK J, JO M, LEE J, JUNG S, KIM S, SHIN J, PARK S, LEE T, HWANG H

Dielectric thickness dependence of carrier mobility in graphene with HfO2 top dielectric

APPLIED PHYSICS LETTERS

FALLAHAZAD B, KIM S, COLOMBO L, TUTUC E

Visibility and Raman spectroscopy of mono and bilayer graphene on crystalline silicon

APPLIED PHYSICS LETTERS

SONG EB, LIAN B, XU GY, YUAN B, ZENG CF, CHEN A, WANG MS, KIM S, LANG MR, ZHOU Y, WANG KL