国家/地区 Russia（3）
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作者 KOMISSAROV IV（3）

Plasma assisted-MBE of GaN and AlN on graphene buffer layers

JAPANESE JOURNAL OF APPLIED PHYSICS

BORISENKO DP, GUSEV AS, KARGIN NI, KOMISSAROV IV, KOVALCHUK NG, LABUNOV VA

Possibility of Determining the Graphene Doping Level Using Raman Spectra

JOURNAL OF APPLIED SPECTROSCOPY

KOVALCHUK NG, NIGERISH KA, MIKHALIK MM, KARGIN NI, KOMISSAROV IV, PRISCHEPA SL

Few-Layer Graphene as an Efficient Buffer for GaN/AlN Epitaxy on a SiO2/Si Substrate: A Joint Experimental and Theoretical Study

APPLIED SCIENCESBASEL

BORISENKO DP, GUSEV AS, KARGIN NI, DOBROKHOTOV PL, TIMOFEEV AA, LABUNOV VA, MIKHALIK MM, KATIN KP, MASLOV MM, DZHUMAEV PS, KOMISSAROV IV